Abstract
The wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars is analyzed in this work. By using solutions of KOH in ethylene glycol (KE), we discover the difference in wet-etching processes with and without an AlGaN layer. In the Ga-polar micro-pillar GaN-based nano-wire, a micro-pillar with {1−100} facet and a pyramid with a {11−212} facet are realized by accurately controlling the wet-etching rate and time, respectively. Schematic drawings are established to explain the dissimilarity of these two structures. Our research attempts to fabricate lager scale nano-wires and quasi-polarity substrates.
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