Abstract
The electrical and chemical stability of Mo-InGaAs films for source-drain applications in transistor structures has been investigated. It was found that for 5 nm thick Mo films, the sheet resistance remains approximately constant with increasing anneal temperatures up to 500 °C. A combined hard x-ray photoelectron spectroscopy and x-ray absorption spectroscopy analysis of the chemical structure of the Mo-InGaAs alloy system as a function of annealing temperature showed that the interface is chemically abrupt with no evidence of inter-diffusion between the Mo and InGaAs layers. These results indicate the suitability of Mo as a thermally stable, low resistance source-drain contact metal for InGaAs-channel devices.
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