Abstract
The article provides information on the temperature dependence of the main characteristics of an uncooled photodetector based on the InGaAsSb compound, for the spectral range 1.7 ... 2.3 μm. Techniques have been developed, data on integral sensitivity, spectral, noise and threshold characteristics of PHD in the temperature range have been studied and presented (223 - 323 Ƙ). Analytical expressions for the temperature dependence of the characteristics are obtained. Noise model PHD is proposed. It was found that the increase in noise with increasing temperature is associated with a change in the differential resistance of the photodiode, and the frequency dependence was determined by the characteristics of the preamplifier. The volt sensitivity of the PHD to the ABB radiation of 800 K reached 40·103 V/W, and the detecting ability D*(λmax,1000.1)=9.4·1010 W-1·cm·hz1/2 at room temperature.
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