Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules

Abstract

The stacking fault formation during physical vapor transport growth of heavily nitrogen-doped (mid-1019 cm−3) 4H-SiC crystals was investigated. Low-voltage scanning electron microscopy (LVSEM) observations detected the stacking fault formation on the (000-1) facet of heavily nitrogen-doped 4H-SiC crystals. Stacking faults showed characteristic morphologies, and atomic force microscopy (AFM) studies revealed that these morphologies of stacking faults stemmed from the interaction between surface steps and stacking faults. Based on these results, the stacking fault formation mechanism in heavily nitrogen-doped 4H-SiC crystals is discussed.