Abstract
Surface effect on epitaxial semiconductors has been widely investigated but limited to constant surface excess energy or surface stress so far. This work provides the first report on the complete surface elasticity tensors of wurzite GaN by atomistic simulations. As an application, this result is used in the investigation of the elastic relaxation of GaN nanoisland. It is demonstrated that surface elasticity becomes important to determine the overall property of the nanoisland when its size is lower than 10nm. This could hopefully help the fabrication and design of high quality nanostructures.
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