Abstract
HfO2 thin films of different thicknesses and deposited by two methods (ALD and MOCVD) werestudied. The microstructure of films was characterized by reflection spectroscopy,x-ray diffraction (XRD), and soft x-ray reflectometry. It was established that theHfO2 film microstructure is closely dependent on film thickness. The 5 nm thick film synthesizedby ALD shows an amorphous phase while the film prepared by MOCVD wasinhomogeneous in depth and showed signs of crystalline structure. First results on thereconstruction of the depth distribution of chemical elements based on the analysis ofreflectivity curves are discussed.
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