Abstract
The elemental composition, structural, optical and electronic properties of p-type Cu3BiS3 thin films are investigated. The films are shown to be single phase orthorhombic, with a measured composition of Cu3.00Bi0.92S3.02. A surface oxidation layer is also clarified using energy dependent X-ray microanalysis. Photoreflectance spectra demonstrate two band gaps (EgX =1.24eV and EgY =1.53eV at 4K) associated with the X and Y valence sub-bands. The photocurrent excitation measurements suggest a direct allowed nature of EgX. Photoluminescence spectra at 5K reveal two broad emission bands at 0.84 and 0.99eV quenching with an activation energy of 40 meV.
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