Abstract
ABSTRACTWe report on our investigation of the silicon nitride on hydrogenated amorphous silicon interface by high frequency capacitance-voltage measurements. We show evidence for the existence of a large number of interface states at energies less than or equal to 0.36 eV below the hydrogenated amorphous silicon conduction band. In addition, we demonstrate that the states responsible for the hysteresis in capacitance-voltage characteristics are located in the silicon nitride layer. Finally, we argue that the ability of hydrogenated amorphous silicon to act as hole diffusion barrier is responsible for the observed flat-band voltage shift.
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