Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si

Abstract

A transparent electrode of Si doped β-Ga2O3 films for solar cells, flat panel displays and other devices, which consists of chemically abundant and ecological friendly elements of gallium and oxygen, was grown on silicon substrates by RF magnetron sputtering using sintered Ga2O3 and Si target. The Si composition in the β-Ga2O3 film is determined by electron dispersive X-ray spectroscopy. The X-ray photoelectron spectroscopy peak ratio of oxygen over gallium decreases with increasing Si content. It is concluded that Si substitutes for the Ga sites in the β-Ga2O3 film.