Abstract
The short-circuit withstand time and on-resistance trade-off is investigated in 4H-SiC Power MOSFETs. We compare the static and short circuit withstand time results along with JFET width dependency and PWELL doping variation of MOSFET. We present that smaller Rds,on by wider JFET width and lighter doped PWELL results in worse short circuit withstand time.
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