Abstract
High breakdown voltage and smaller size of edge termination are required in SiC power devices. We simulated reverse bias characteristics of a variety of edge terminations targeting 6.5 kV MOSFET and the FLR showed the best trade-off between the size and the implanted Al dose. Fabricated pn diode TEGs with a FLR demonstrated over 6.5 kV breakdown voltage. We observed the avalanche breakdown visually by light emission and it corresponded to the simulated electric field. These indicate that we can fabricate the desirable FLR for 6.5 kV MOSFET.
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