Abstract
Abstract The irradiation was condacted by polyenergetic multycomponent ion beam with room temperature. The increase of sputtering coefficients is observed in the range of He+ ion mean energy of 3–15 keV when the width of energy spectrum is growing. The penetration of implants atoms in depth under irradiation by polyenergetic beam is 3–10 times deeper in comparison with that one under irradiation by monoenergetic He+, Ar+ beam of the same ions. The basie differences in penetration (under irradiation by polyenergetic and monoenergetic He+, Ar+ ion beam) are connected with peculiarities of defect creation and with the distribution of internal stress by depth of irradiated material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
