Abstract
The method of channeling and backward scattering of H+ and He+ ions has been used to analyze the radiation defects in a single crystal of KCl when the crystal is irradiated with H+ and He+ ions with energies of 1 MeV. The position of the displaced atoms in the crystal lattice was determined and the value of the cross section for the formation of radiation defects and their rate of formation as a function of the radiation dose and orientation of the bombarded beam with respect to the 〈100〉 crystallographic axes of the crystal are found. The effect of an external electric field on the formation of the radiation defects was investigated. The effects of irradiation with H+ and He+ ions are compared with one another. It is shown that mechanisms connected with ionization and excitation of the crystal atoms make the main contribution to the formation of defects.
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