Abstract
We report that crystallization property of amorphous Sb2Te3 can be significantly improved via Al doping. However, the effect of Al on the structure and electrical properties of crystalline Sb2Te3 is not clear, which is valuable for phase change memory. In this work, we find that Al addition could increase the crystallization temperature and change the structure. The results show that both nucleation and growth of crystallite are suppressed by Al doping. Based on ab initio calculation, we have validated the formations of Al-Sb and Al-Te bonds in doped films and the effect of Al on the structure and properties of crystalline Sb2Te3. Especially for 10 at% Al doped Sb2Te3 (Al-Sb-Te) film, which exhibits better thermal stability and might be a good candidate material for phase change memory.
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