Investigation of the precursors of a-Si:H films produced by decomposition of silane on hot tungsten surfaces

Abstract

A-Si:H films were deposited by the hot filament method. In order to study the film precursors, hydrogen content and bonding of the films were examined by IR spectroscopy and compared to films prepared by glow discharge. The degree of silane decomposition was measured as a function of filament temperature. The results suggest that silicon atoms are the major species desorbing from the hot filament surface and that the film properties depend strongly on the reaction of the silicon atoms with undecomposed silane in the gas phase.