Abstract
Photoelectric devices can be so widely used in various detection industries that people began to focus on its research. The research of photoelectric sensors with high performance has become an industry goal. In this paper, we prepared photodetectors using organic–inorganic hybrid semiconductor materials with narrow bandgap hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) and investigated the detector photoresponse and time-response characteristics under a single light source. The device exhibits high photoresponsivity and fast response time. The photoresponsivity can reach 1.45 × 10−3 A/W and 8.5 × 10−4 A/W under laser irradiation at 375 nm and 532 nm wavelengths, and the rise and decay times are 63 ms and 62 ms, 62 ms and 64 ms, respectively. The device has excellent performance and this work can extend the application of organic–inorganic hybrid semiconductor materials in photovoltaic and photodetectors.
Highlights
A photodetector is a device that converts a light signal into an electrical signal output, and they play a vital role in various industrial and scientific fields such as sensing, communication, and imaging [1,2,3,4,5,6]
Developed a photodetector based on BaTiO3 material, which exhibited an excellent pyroelectric effect, and output current/voltage signals were observed even under slight temperature fluctuations
40 μL of the SnO2 solution was spin-coated at 4000 r.p.m. for 30 s, and the procedure was repeated once to ensure that the SnO2 spin-coating solution could cover the indium tin oxides (ITO) substrate completely and uniformly
Summary
A photodetector is a device that converts a light signal into an electrical signal output, and they play a vital role in various industrial and scientific fields such as sensing, communication, and imaging [1,2,3,4,5,6]. The narrowest bandgap of organic–inorganic hybrid semiconductor material hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5 ) is 1.89 eV [9] This material has been used to prepare devices, and D. Liu et al prepared conventionally structured solar devices using organic–inorganic hybrid semiconductor material hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5 ) and tested the relevant photovoltaic performance under solar light conditions [11]. Wang et al prepared photodetectors without electron transport layers on this basis and found that the high photoresponsivity and specific detectivity made the performance of photodetectors based on HDA-BiI5 material greatly improved [12]. We use the organic–inorganic hybrid semiconductor material hexane1,6-diammonium pentaiodobismuth (HDA-BiI5 ) as the light-absorbing layer to prepare photodetectors with ITO/SnO2 /HDA-BiI5 /Spiro-MeOTAD/Au structures and explore the photoresponse and time-response characteristics of the HAD-BiI5 -based photodetectors.
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