Abstract
The photoacoustic effect in metal-semiconductor system, i.e. the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured in dependence on the modulation frequency of optical beam, using the photoacoustic frequency transmission method for Au film-Si substratum sample. Thermal and electronic transport parameters were obtained by the analysis of experimental and theoretical photoacoustic signals including the Schottky barrier effect.
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