Abstract
The results of studying the static current-voltage characteristics of EuGa2S4:Er3+crystals at room temperature are presented. The mechanism of current passage in them is revealed. The height of the potential barrier at the metal-semiconductor interface (0.9 eV), the relative permittivity of crystals (3.1), and the concentration of traps (N~ 7.14· 1016 cm-3) were calculated, and the shape of the potential well for the electrons trapped in the traps was determined Keywords: current-voltage, metal-semiconductor, crystals, potential barrier,erbium
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