Abstract
The experimental curves of growth rate for {111} and { 1 1 1 } faces of GaAs as a function of the inverse of the temperatu re 1/ T are interpreted by the influence of the supersaturation, of the blocking of growth sites by chlorine, using the diffusion equation for As 4, As 2 and GaCl molecules and the incorporation of AsGaCl, GaAs and As molecules in half-crystal sites. The dissimilar surface structures of these two kinds of faces explain that an important retarding factor increases the entering time to incorporate in the kinks of { 1 1 1 } face. That allows to understand the very different behaviour of {111} and { 1 1 1 } faces.
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