Abstract
AbstractIn this paper, the optical properties of our nanorod array structures fabricated from InGaN/GaN multiple quantum wells (MQWs) epiwafers with two different kinds of indium compositions have been investigated. The optical performance of our nanorod samples are significantly enhanced compared to the as‐grown epiwafers, in particular, such improvement is much more pronounced in the nanorod array structure with a higher indium composition. This is mainly attributed to effective strain relaxation as a result of fabrication into nanorod structure, leading to significant reduction in quantum confined Stark effect (QCSE). X‐ray reciprocal space mapping (RSM) measurements have been performed in order to quantitatively evaluate the stain relaxation in the nanorod samples, confirming that the majority of the strain in InGaN/GaN MQWs can be relaxed as a result of fabrication into nanorods. Finally, excitation‐power dependant photoluminescence measurements performed at a low temperature also support the conclusion (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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