Abstract
This article presents the results of the experimental determination of the mechanical parameters of a GaN films grown by molecular beam epitaxy on silicon substrates. The values of Young’s modulus and internal stresses for GaN films with different growth parameters have been determined. The study was carried out by contact and optical methods on the formed cantilever and beam microstructures. The measured values can be used to develop the design and evaluate the characteristics of MEMS based on gallium nitride films.
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