Abstract
The ion defect states in SiO2 film on Si substrata (SiO 2/Si) was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the energy of excitation optical beam in the sub-bandgap region. In the energy range near the energy gap of Si, the PA spectra are the consequence of the ion-defect states formed on dielectric-semiconductor interface. The sub-bandgap PA spectra are proposed to obtain the energy-dependent distribution of interface states in SiO2-Si system with different concentration of Na-ions
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