Abstract
This paper models the area dependency for thin SiO 2 films (1.2E-7 to lE-2 cm 2) using Time Dependent Dielectric Breakdown testing over a wide range of electric fields and test temperatures. The data generated indicates that the field and temperature acceleration factors are the same for all the areas tested indicating that the failure mechanism is the same even though the times to failure are different for all the area sizes. The paper will explain and model the area effect on TDDB lifetime and use the model to predict gate oxide reliability in the design cycle.
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