Abstract
High resolution electron energy loss spectroscopy (HREELS) is used to study the formation of the Schottky barrier on cleaved InSb(110) surfaces after deposition of Sn (polycrystalline α-Sn). The band bending at the InSb/Sn interface is derived from the energetic position of the surface plasmon-phonon polariton of the free electrons. Sn deposition in coverages higher than 0.2 monolayers causes pinning of the Fermi level near 100 meV above the conduction band minimum of InSb. This pinning position remains unchanged up to overlayer thicknesses of more than 15 monolayers of Sn. The results are consistent with predictions of the defect model for Schottky barrier formation.
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