Abstract
The photoluminescence spectra were studied in 3C-SiC / 4H-SiC heterostructures and single crystals of 3C-SiC. It was shown that 3C-SiC epitaxial layers grown on 4H-SiC substrates have significantly less structural perfection than 3C-SiC single crystals. It was found that doping with aluminum leads to the appearance of characteristic photoluminescence (PL) both in the epitaxial layers and in 3C-SiC single crystals. At the same time, the irradiation of the epitaxial layers does not lead to the appearance of “defective PL (DFL), as is observed for single crystals. It was suggested that the twin boundaries existing in 3C-SiC epitaxial layers could serve as getters of radiation defects that are components of donor – acceptor pairs (DAP) responsible for DFL.
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