Abstract
Silicon is the most widely used material in the electronics industry. To develop silicon-based devices for optoelectronic applications, one would like to make silicon a photon-emitting material. Unfortunately, silicon is an indirect gap semiconductor and, thus, the efficiency of photon emission is extremely low since the radiative recombination of the electron–hole pair is not allowed without the assistance of a momentum-conserving phonon. Moreover, the existence of defects leads to an almost total quenching of this rather unlikely process.
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