Abstract
We investigated the reduction of equivalent oxide thickness (EOT) of the in-situ formed Hf-based metal/oxide/nitride/oxide/silicon (MONOS) structure nonvolatile memory (NVM) device utilizing the HfON tunneling layer (TL). In case of the HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> TL, the SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interfacial layer (IL) was formed which incrased EOT. The HfON device shows on/off current of 3.2 ×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> at drain voltage ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> D</sub> ) of 0.05 V, subthreshold swing (SS) of 113 mV/dec., and memory window (MW) of 3.9 V at the program voltage/time ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> PGM</sub> /t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> PGM</sub> ) and erase voltage/time ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> ERS</sub> /t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> ERS</sub> ) of ±8 V/100 ms. Although, it shows low retention characteristics with 50% after 10 years, low-voltage and short-pulse operation were achieved, such as MW of 1 V at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> PGM</sub> /t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> PGM</sub> and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> ERS</sub> /t <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> ERS</sub> of ±8 V/ 1 μs. Furthermore, it showed larger drain source voltage ( V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> ) dependence than HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> TL by utilizing charge injection from electrode side, which would reduce the operation voltage and increase the operation speed.
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