Abstract
Epitaxial layers of Si1−x Snx(0≤x≤0.04) solid solutions on silicon substrates were grown by liquid phase epitaxy in a temperature interval from 1050 to 950°C. Optimum conditions favoring the growth of crystallographically perfect epitaxial films of Si1−x Snx were established based on the results of the X-ray diffraction, X-ray radiometry, and morphology investigations. The obtained Si-Si1−x Snx structures are intended for use in the technology of various microelectronic devices.
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