Investigation of the extraction of short diffusion lengths from simulated electron‐beam induced current

Abstract

AbstractThis paper reports on the investigations via 2‐D simulation into the accuracy of diffusion length extraction from scanning electron‐beam induced current measurements when the diffusion length, L is very short. L is extracted by using the direct method proposed by Chan et al. [1] and later refined by Kurniawan and Ong [2] to take finite junction depth into account. The 2‐D simulations were undertaken using Synopsys® Sentaurus TCAD and a realistic electron‐hole pair generation volume was created using CASINO v2.42 [3], a Monte Carlo Scanning Electron Microscope interaction simulation software, and imported into Sentaurus. The voltage and diameter of the electron beam and diffusion length and surface recombination velocity of the semiconductor materials were varied in the simulations to determine the errors in the diffusion length extracted from the EBIC signals as a function of these parameters. The results of the simulation show that the accuracy of the method proposed in [1] is reasonably accurate and that the beam voltage and spot size do not have significant effects on the accuracy (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)