Abstract
It is established that when a liquid-aluminum-silicon (Al-Si) structure is bombarded with ions and electrons having energies up to 6 keV, the process of Si dissolution in the aluminum is slowed. Mechanisms are put forward for the formation of an excess concentration of atomic-size voids (“vacancies”), the formation of a vacancy flux normal to the Si surface, and entrainment of impurity atoms by this flux. It is shown experimentally that zones completely free from Si atoms, where the silicon exhibits maximum solubility, in the aluminum may be formed in the bulk of the aluminum melt. The size of these zones can easily be controlled by the parameters of the ion-electron flux.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
