Abstract
This paper investigates by numerical modeling the results of substrate hot electron (SHE) injection experiments in virgin and stressed devices and the corresponding increase of the contribution of HEs to the gate current due to the stress-induced oxide traps. Experimental evidence of HE trap-assisted tunneling (HE TAT) is found after Fowler-Nordheim (FN) stress and SHE stress. An accurate physically based model developed to interpret the experimental results allowed us to study the energy distribution of generated oxide traps in the two different stress regimes. It is found that degradation in HE stress conditions and FN stress conditions cannot be explained by the same trap distribution. For a given stress-induced low field leakage current, a larger concentration of traps in the top part of the oxide band gap is needed to explain HE TAT after SHE stress than after FN stress. The range of trap energy where each technique is sensitive is also identified.
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