Abstract
The energy band alignment at the multilayer-MoS2/ZrO2 interface and the effects of CHF3 plasma treatment on the band offset were explored using x-ray photoelectron spectroscopy. The valence band offset (VBO) and conduction band offset (CBO) for the MoS2 /ZrO2 sample is about 1.87 eV and 2.49 eV, respectively. While the VBO was enlarged by about 0.75 eV for the sample with CHF3 plasma treatment, which is attributed to the up-shift of Zr 3d core level. The calculation results demonstrated that F atoms have strong interactions with Zr atoms, and the valence band energy shift for the d-orbital of Zr atoms is about 0.76 eV, in consistent with the experimental result. This interesting finding encourages the application of ZrO2 as gate materials in MoS2-based electronic devices and provides a promising way to adjust the band alignment.
Highlights
In the past decades, SiO2/Si-based materials played the dominant role in the manufacture of electronic devices, such as integrated logic circuits, nonvolatile memory, and so on
We investigated the band alignment of multilayer MoS2/ ZrO2 systems since the nature of the interface has a direct bearing on the characteristics of the devices, and the effect of CHF3 plasma treatment on the band offset at MoS2/ZrO2 interface was explored
The Raman peak position and full width at half maximum (FWHM) of MoS2 is almost the same before and after transfer, indicating that the transfer process exerts a small influence on the quality of the material
Summary
SiO2/Si-based materials played the dominant role in the manufacture of electronic devices, such as integrated logic circuits, nonvolatile memory, and so on. As the size of the devices scaled down ceaselessly from micrometers to below 10 nm, the traditional semiconductors have been hard to satisfy the requirement of enhanced specific capacitance, low gate leakage current, and high carrier mobility. The promising performance of the electronic and optoelectronic devices made from MoS2 layers, such as field-effect transistors [3–5], sensors [6], and photodetectors [7], proves it to be potential substitute of Si in conventional electronics and of organic semiconductors in wearable and flexible systems [8–11]. Even though single-layer MoS2-based Field-effect transistors (FETs) have exhibited excellent performances with a high current on/off ratio about 108 and a low subthreshold swing ~ 77 mV/decade [3], its extensive applications were hindered by the synthesis of large area high-quality single-layer MoS2 and the stability of the devices [12–14].
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