Abstract
Depth profiles of Ti, O, N, C, H, Cu and substrate atoms (Na, Ca, Si and O) were investigated in near-surface layers of glass. Rutherford Backscattering Spectrometry (RBS) of 4He+ ions, non-Rutherford and resonant elastic Backscattering Spectrometry (BS) of 4He+ and 1H+ ions (reactions 16O(p, p)16O, 28Si(p, p)28Si, 12C(p, p)12C, 14N(p, p)14N and 16O(4He, 4He)16O) and method of Elastic Recoil Detection (ERD) of 1H+ using 2.4 MeV 4He+ analysis beam were applied in complex for the elements depth profiling. The sample was modified by using the new ion source TAMEK. The source operated in the regime of ion beam assisted deposition (IBAD) of wide aperture (300 cm2) Ti ions flow (ion implantation at average beam energy ≈ 120 keV and simultaneous deposition of the same ions at energy 100 eV) in pulse mode. The sample preparation was carried out in a nitrogen atmosphere with the pressure of about 3 × 10−4 Torr. Rate of dose accumulation at the grounded target was ≈ 1016ioncm2 min. Surface temperature of the sample was less than 50°C during IBAD treatment. Two characteristic areas were indicated in the modified layer: the mutual mixed Ti-glass layer and the coating with Ti, O, N, C, H and Cu composition. Total thickness of modified Ti-glass layer was found to be ≈ 400 nm.
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