Abstract
In this investigation we have measured the electron concentration n=7/spl times/10/sup 15/ cm/sup -3/ in the undoped epitaxial GaAs layer grown on the well conducting GaAs substrate, I-V characteristic resistance of the Schottky junction formed in that layer and we have evaluated layer resistivity /spl rho/=0.2 /spl Omega/ cm, barrier potential /spl phi/=0.785 V, ideality factor /spl eta/=1.08 and series resistance R/sub s/=5 /spl Omega/ of the Schottky junction. Then we have measured I-V characteristic between the coplanar ohmic contact formed on the undoped epitaxial GaAs layer grown on SI GaAs substrate and we have evaluated breakdown electric field E/sub T/=1.5 kV/cm, sheet resistivity R/sub s/=10/sup 9/ /spl Omega//0, and layer resistivity /spl rho/=5/spl times/10/sup 4/ /spl Omega/ cm.
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