Investigation of the effects of trap-assisted tunneling and temperature variations on the sensitivity metrics of a tunnel FET biosensor

Abstract

The study presented in this paper discusses Trap-Assisted Tunneling (TAT) and temperature variation as the subjects of concern regarding the sensitivity metrics of the presented TFET biosensor. In order to have a minimum amount of process-related variability, the concept of a dopingless TFET structure is used in the development of the suggested device. However, considering the possibility of traps in the doped Silicon–Germanium pocket, an investigation has been conducted using a certain set of models during simulation. The analysis of deep and shallow trap states incorporated to assess TAT current prevails that deep trap affects the biosensors' sensitivity by a significant rate. In addition to this, temperature variations also affect the bandgap narrowing owing to changes in the biosensor's sensitivity.