Abstract
The paper presents the results of studies obtained with the development of the technology of electron-beam crucible impregnation of metallurgical silicon. It is shown that refining of silicon from background and dopant impurities in electron-beam crucible-free zone melting occurs by zone purification during melting and as a result of evaporation of impurities from the sample surface. The mathematical model and computational experiment were been performed to determine the temperature gradient at different rates of zone melting. It was found the diapason of temperature gradients, which provides the columnar structure of crystallites and the purification of the samplesdue the melting with the zone recrystallization procedure. The level of the resistivity of the ingots increases at the end.
Highlights
Photoelectric converters (FEC) of solar cells are made of silicon, and experts believe that in the near future there will be no competitive technology based on the use of other materials [1]
As one of the trends in the development of silicon production technology for solar energy, direct silicon production has been determined by directional crystallization methods from refined commercial silicon [1]
This is due to the different values of the temperature gradient arising at the boundary between the liquid and solid phases [7]
Summary
Photoelectric converters (FEC) of solar cells are made of silicon, and experts believe that in the near future there will be no competitive technology based on the use of other materials [1]. The method of crucible-free electron-beam zone recrystallization used in this paper makes it possible to purify silicon determined by these three basic principles.The second and third statements are based on carrying out the process in a high vacuum and the difference in the vapor pressure of the various elements, which will lead to the removal of components for which. Specific electrical resistance is one of the most important parameters determining the quality of semiconductor silicon This parameter characterizes the degree of purity of semiconductor materials [3].The cyclograms of the process of electron-beam crucible-free zone melting of metallurgical silicon were developed. Melting of the samples was carried out at velocities of 0.0056 mm/s; 0.014 mm/s; 0.028 mm/s; 0.039 mm/s; 0.056 mm/s.In Fig. 2 shows the cyclograms of the electron-beam crucible zone melting process of silicon polycrystals for melting rates of 0.0056 - 0.056 mm/s.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
