Investigation of the effect of annealing on Si(100) substrate modified by Ga+ focused ion beam

Abstract

In this work, we studied the effect of annealing the silicon surface on the morphology of focused ion beam modified areas. It was found that an increase in the ion beam accelerating voltage during surface treatment significantly affects the morphology and the appearance of the implanted material on the surface or its absence/evaporation during annealing. It is shown that an increase in number of ion beam passes leads to the formation of holes on the surface of the modified areas, which is a sign that significant damage to the substrate material has occurred.