Abstract

It is shown that a close correlation exists between scanning photoluminescence images of semi-insulating InP:Fe crystals and the Fe distribution in these samples. Further investigations show that the photoluminescence contrast corresponds to local fluctuations in the minority carrier lifetime. This raises the question whether the Fe 2+/Fe 3+ level in InP:Fe is the deep level that determines the charge carrier lifetime.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call