Abstract
Positron lifetime spectroscopy has been employed to explore grown-in defects in Cd 1− x Zn x Te (CZT) as a function of increasing Zn content. We find that with the increase of Zn content, both the average positron lifetime τ Avg, and the lifetime in the bulk τ Bulk, change smoothly from values typical for CdTe to those for ZnTe. In all samples, a defect-related lifetime component, τ D could be resolved with values decreasing from 347 ps in CdTe to 333 ps in ZnTe. This lifetime component is attributed to neutral Na (Cd,Zn)-V Te complexes in concentrations of around 10 16 cm −3, with a transition energy level below 0.19 eV above the valence band. It is established that these complexes are not connected to the p-type conductivity and their general characteristics are independent of the Zn content. This picture holds for stoichiometrically grown CZT and is independent of the growth method, whereas growth under Cd-rich conditions introduces a neutral impurity-V Te complex with higher concentrations as compared to growth from stoichiometric conditions.
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