Investigation of the cutoff frequency of double linear halo lightly doped drain and source CNTFET

Mohammad Javad Hejazifar,Seyed Ali Sedigh Ziabari

doi:10.1007/s40089-014-0118-3

Abstract

In this work we investigate the n-type single halo implantation in channel of lightly doped drain and source CNTFET (SH-LDDS-CNTFET) and propose the n-type double linear halo implantation in the channel of LDDS-CNTFET. These transistors are simulated with a non-equilibrium Green's function method. We demonstrate that in the proposed structure the fT at the VGS ranges of 0-0.25 V and more than 0.42 V is much higher compared to the LDDS-CNTFET and SH-LDDS-CNTFET and the SH-LDDS-CNTFET, respectively. Finally, simulations demonstrate that the fT of the proposed transistor is more than the LDDS-CNTFET at a wide range of VGS, whereas the fT of SH-LDDS-CNTFET is more than the LDDS- CNTFET for narrow ranges of VGS.

Highlights

After discovering the carbon nanotube (CNT) by Aijima [1], scientific researches about this structure are expanded due to its excellent electronic properties
In this work we investigate the n-type single halo implantation in channel of lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) (SH-LDDS-CNTFET) and propose the n-type double linear halo implantation in the channel of LDDS-CNTFET
Dash-dotted, dashed and solid lines represent the fT for the LDDS-CNTFET, SHLDDS-CNTFET, and Double linear halo (DLH)-LDDS-CNTFET, respectively

Summary

Introduction

After discovering the carbon nanotube (CNT) by Aijima [1], scientific researches about this structure are expanded due to its excellent electronic properties. Keywords Carbon nanotube field effect transistor (CNTFET) Á Cutoff frequency (fT) Á Single halo (SH) Á Double linear halo (DLH) Á Non-equilibrium Green’s function (NEGF) We have investigated the implantation of n-type single halo in channel of LDDS-CNTFET (SH-LDDSCNTFET) and its effects on some characteristics such as the fT.

Results

Conclusion