Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x   0 ≤ x ≤ 1    Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)

A S Saidov,M Kalanov,J.M Abdiev,A.Sh Razzakov,Sh.N Usmonov,D V Saparov,A.M Akhmedov,A Kutlimratov,Sefer Bora Lisesivdin

doi:10.1155/2021/3472487

Abstract

Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantages of III-V semiconductor compounds. The structural features, the distribution of the atoms of the components over the thickness of the epitaxial layer, the photoluminescence spectrum of the (Si2)1-x(GaP)x (0 ≤ x ≤ 1) solid solution, and the electroluminescence of the structure n-GaP-n+-(Si2)x (GaP)1-x (0 ≤ x ≤ 0.01) have been investigated. It is shown that the layers of the solid solution have a perfect single-crystal structure with the crystallographic orientation (111), with the size of subcrystallites ∼ 39 ± 1 nm. The epitaxial layer (Si2)1-x(GaP)x (0 ≤ x ≤ 1) is a graded-gap layer with a smoothly and monotonically varying composition from silicon to 100% GaP. The energy levels of atoms of Si2 molecules which are located 1.47 eV below the bottom of the conduction band of gallium phosphide are revealed. Red emission of n-GaP-n+-(Si2)x(GaP)1-x (0 ≤ x ≤ 0.01) structure which is caused by electron transitions with participation of energy levels of Si2 atoms is detected.

Highlights

In recent years, “silicon photonics” has very developed to combine the advantages of optical data processing with Si microelectronic technology. is merger is becoming increasingly important for future high-speed technologies [1]
Recent work aimed at careful control and design of Si substrate preparation and GaP nucleation has shown that antiphase domains (APDs), stacking faults (SF), and MT defects can be suppressed [9]
GaP-on-Si epitaxial layers were grown by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE)

Summary

Introduction

“silicon photonics” has very developed to combine the advantages of optical data processing with Si microelectronic technology. is merger is becoming increasingly important for future high-speed technologies [1]. Almost equal intensities of diffraction reflections (111) from different Si and GaP sublattices make it possible to determine the composition of the solid solution in the near-surface layer of the film as stoichiometric Si2-GaP.

Results

Conclusion