Abstract
AbstractThis paper investigates the crystallization behavior of a Ge2Sb2Se4Te1 (GSST) chalcogenide phase change material film using Raman spectroscopy. The properties of as‐deposited, thermally treated, and laser‐written GSST films are investigated. A single mask exposure laser excitation process was developed using a spatial light modulator with an 800 nm femto‐second laser to generate a direct laser‐written EXTREME pattern. The correlation between the laser‐imprinted EXTREME pattern and the phase change transition from amorphous to crystalline state of the GSST film was characterized using Raman spectroscopy.
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