Investigation of the correlation between structure and microwave dielectric properties of ZnV2O6 ceramic using P-V-L bond theory

Abstract

Novel ZnV2O6 ceramic was synthesized using the solid-state process. A single monoclinic crystalline phase with a space group C2/m was detected at the sintering temperatures ranging from 580 to 670 °C. The correlations between the chemical bond parameters and microwave dielectric properties were analyzed using the P-V-L bond theory. The full width at half maximum (FWHM) of the most intense Raman peak at 914 cm–1 is inversely proportional to the Q×f value. The ZnV2O6 ceramic can be well-sintered at 640 °C to exhibit an excellent combination of microwave dielectric properties (εr =14.6, Q×f =46,000 GHz and τf =–42 ppm/°C). Additionally, the specimen sintered at 580 °C (εr =13.2, Q×f =28,000 GHz and τf =–5.2 ppm/°C) is also suggested for highly thermal-stable applications. Both samples can be used as ultra-low-temperature co-fired ceramics (ULTCCs) for high-frequency applications.