Abstract
In this study the features of the growth processes of copper silicide nanostructures on Si (111) were investigated. The nanostructures were grown by molecular beam epitaxy. It has been shown that the islands and nanowires are formed at the substrate temperature 550°C. The nanostructures have ideal facets and lateral edges. The long side of nanowires is oriented along the crystallographic direction <110> Si. We have shown that there is a range of thicknesses at which nanowires generally grow.
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