Abstract
We report on two kinds of investigation of the chip to photodetector coupler (CTPC) with uniform and blazed subwavelength grating (SWG) on silicon-on-insulator (SOI) that were conducted for silicon-based hybrid photodetector integration in an arrayed waveguide grating demodulation integrated microsystem. The theoretical model is presented, 3D FDTD and BPM simulations are used to optimize the coupler design. InP/InGaAs photodetector and SOI wafer were integrated through benzocyclobutene bonding. An efficient high-power absorption for TE mode in a broad band is achieved. The power absorption efficiencies of uniform and blazed SWGs in silicon-based hybrid photodetector integration at 1550nm reach 73% and 75%, respectively in the simulation and it reaches as high as 25% in the measurement when coupling the TE-polarized 1550nm light.
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