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Abstract
This paper presents experimental results of a study of radiation in the vacuum ultraviolet and extreme ultraviolet spectral region, generated by electrons with an energy of 5.7 MeV in a multilayer X-ray mirror. The angular distribution of the radiation generated in the rear hemisphere from the input surface of the target was measured. The contribution to the radiation yield caused by the periodic structure of the multilayer target was experimentally investigated.
Highlights
Imaging of transverse beam profiles based on backward transition radiation (BTR) in the visible region of the spectrum is widely used in modern linear accelerators
This paper presents the results of a measurement of the angular distributions of extreme vacuum ultraviolet (EUV) radiation from a multilayer radiator consisting of 50 Mo/Si bilayers placed onto a silicon substrate
From the figures it can be seen that the angular distribution for the thick Si target has a considerable background contribution (BG) in comparison to the thin Al target
Summary
Imaging of transverse beam profiles based on backward transition radiation (BTR) in the visible region of the spectrum is widely used in modern linear accelerators. The latest results from new generation VUV and X-ray free-electron lasers, such as LCLS (USA), FLASH (Germany), and SACLA (Japan), have demonstrated that there are serious limitations in using such a beam diagnostics because of instabilities arising in individual bunches This microbunching causes the appearance of coherent effects (quadratic dependence of the radiation power on the microbunch population), which makes it impossible to use standard imaging techniques based on OTR. [1] it was proposed to use BTR in the spectral region of the extreme vacuum ultraviolet (EUV) In this case, the main problem is connected with the quite small spectral density of the radiation yield from conventional radiators, consisting of a homogeneous substance (monolayer targets). This requirement of a high spectral density is driven by the fact that for beam diagnostics in modern linear accelerators it is necessary to resolve beam profiles on the level of individual bunches, which typically contain 109 − 1010 electrons
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