Abstract
The electrical properties of the CaF 2/ p-type-Si(100) interface were investigated using capacitance and conductance methods and also by DLTS. It was found that the capacitance-voltage characteristics are frequency dependent. A trap density of about 10 12 cm −2 per unit area and an apparent capture cross section as large as 10 −9 cm −2 were found in the midgap region. From DLTS measurements, we found a strong energy dependence of the apparent capture cross section. The capture cross section and the density of states decrease for levels close to the valence band. Results are explained in terms of carrier transfer between traps located in the insulating material and those in the semiconductor.
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