Abstract
Abstract Helium was implanted in a homogeneous distribution into thin foils of nickel and copper at room temperature. The development of the irradiation defects and the helium precipitates was investigated by the combined measurements of the change in length and the change in lattice parameter (differential dilatometry). The results show: (a) over the range of He-concentration between 1000 to 10,000 appm of He, the number of vacancies observed in the metals is larger than the number of self-interstitial atoms. Therefore, the majority of the interstitial atoms is not present in small separate dislocation loops but rather in a dislocation network. (b) The number of vacancies cv is larger than the number of the implanted He atoms. This result indicates that highly overpressurized He-bubbles are not the dominant helium-vacancy agglomerates and consequently the growth of the small precipitates is not controlled by a loop punching mechanism or by SIA-emission.
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