Abstract
A photoemission study was performed in order to investigate the interaction of arsenic with InP(110) at room temperature. Formation of a saturated layer of As has been observed, which consists of two different species of As. The adsorbed layer is stable during annealing to temperatures up to 250°C. Annealing to higher temperatures is accompanied by both a significant loss of arsenic from the surface due to desorption and partial incorporation into surface sites of the substrate. The electronic structure of the annealed surface is hardly affected, although As has been incorporated into the semiconductor. The results are discussed in comparison with recent experimental and theoretical investigations.
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