Abstract
We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a-C:H thin film by plasma enhanced chemical vapor deposition (PECVD) system for 30 sec under 30W rf power at a gas pressure of 1.4＊10<TEX>$\^$</TEX>-1/ torr. A high pretilt angle of about 5 by ion beam exposure on the a-C:H thin film surface was measured. A good LC alignment by the ion beam alignment method on the a-C:H thin film surface was observed at annealing temperature of 250<TEX>$^{\circ}C$</TEX>, and the alignment defect of NLC was observed above annealing temperature of 300<TEX>$^{\circ}C$</TEX>. Consequently, the high LC pretilt angle and the good thermal stability of LC alignment by the ion beam alignment method on the a-C:H thin film by PECVD method as working gas at 30W rf bias condition can be achieved.
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